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STB45NF3LL Datasheet(PDF) 3 Page - STMicroelectronics |
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STB45NF3LL Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 11 page ![]() 3/11 STP45NF3LL - STB45NF3LL ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD =15 V,ID = 22.5A RG = 4.7Ω VGS =4.5V (Resistive Load, see Fig. 3) 17 ns tr Rise Time 100 ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =24V, ID = 45A, VGS =5V 12.5 4.6 5.2 17 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD = 15V, ID = 22.5A, RG =4.7Ω, VGS = 4.5V (Resistive Load, see Fig. 3) 20 21 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 45 A ISDM (2) Source-drain Current (pulsed) 180 A VSD (1) Forward On Voltage ISD = 45A, VGS =0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 45A, di/dt = 100A/µs, VDD =15V, Tj = 150°C (see test circuit, Figure 5) 35 44 2.5 ns nC A Safe Operating Area for TO-220/D2PAK Thermal Impedance for TO-220/D2PAK |
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