STP4N20 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STP4N20

Description	N - CHANNEL 200V - 1.3 ohm - 4A TO-220 POWER MOS TRANSISTOR

PDF	8 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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STP4N20

N - CHANNEL 200V - 1.3

Ω - 4A TO-220

POWER MOS TRANSISTOR

s

TYPICAL RDS(on) = 1.3

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE

s

HIGH CURRENT CAPABILITY

s

150

oC OPERATING TEMPERATURE

s

APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

DC-DC CONVERTERS & DC-AC INVERTERS

s

TELECOMMUNICATION POWER SUPPLIES

s

INDUSTRIAL MOTOR DRIVERS

®

INTERNAL SCHEMATIC DIAGRAM

February 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS = 0)

200

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

200

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC4

A

ID

Drain Current (continuous) at Tc =100

oC2.5

A

IDM (

•)

Drain Current (pulsed)

16

A

Ptot

T otal Dissipat ion at Tc =25

oC60

W

Derating Factor

0.48

W /

o C

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

T YPE

VDSS

RDS(on)

ID

STP4N20

200 V

< 1.5

Ω

4A

1

2

3

TO-220

1/8

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