STP4NB50FP datasheet(1/7 Pages) STMICROELECTRONICS

Part #	STP4NB50FP

Description	N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh™ MOSFET

PDF	7 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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PRELIMINARY DATA

April 2003

STP4NB50

STP4NB50FP

N-CHANNEL 500V - 2.5

Ω - 3.8A - TO-220/TO-220FP

PowerMesh™ MOSFET

(1)ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

s

TYPICAL RDS(on) = 2.5 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP4NB50

STP4NB50FP

500 V

< 2.8

Ω

< 2.8

Ω

3.8 A

2.5 A

Symbol

Parameter

Value

Unit

STP4NB50

STP4NB50FP

VDS

Drain-source Voltage (VGS =0)

500

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

500

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuous) at TC = 25°C

3.8

2.5

A

ID

Drain Current (continuous) at TC = 100°C

2.4

1.6

A

IDM ( )

Drain Current (pulsed)

15.2

A

PTOT

Total Dissipation at TC = 25°C

80

35

W

Derating Factor

0.64

0.28

W/°C

dv/dt

Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulation Withstand Voltage (DC)

-

2500

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

TO-220

1

2

3

1

2

3

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

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