STP50NE08 datasheet(3/8 Pages) STMICROELECTRONICS

3 / 8 page

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

td(on)

Turn-on Time

Rise Time

VDD =40 V

ID =25 A

RG =4.7

Ω

VGS =10 V

(see test circuit, figure 3)

130

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =64 V

ID =50 A

VGS =10 V

110

SWITCHING OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

tr(Voff)

Of f-voltage Rise Time

Fall Time

Cross-over Time

VDD =64 V

ID =50 A

RG =4.7

Ω VGS =10 V

(see test circuit, figure 5)

SOURCE DRAIN DIODE

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ISD

ISDM (

•)

Source-drain Current

(pulsed)

200

VSD (

∗)

Forward On Voltage

ISD =50 A

VGS =0

1.5

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 50 A

di/ dt = 100 A/

µs

VDD =30 V

Tj =150

(see test circuit, figure 5)

100

400

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

Safe Operating Area

Thermal Impedance

STP50NE08

3/8

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