Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain-Source Breakdown Voltage

25

-

-

V

ΔBV

Breakdown Voltage Temperature Coefficient

-

0.037

-V/℃

Static Drain-Source On-Resistance

-

-

9

mΩ

-

-

18

mΩ

Gate Threshold Voltage

1

-

3

V

Forward Transconductance

-

25

-

S

-

-

1

uA

-

-

25

uA

Gate-Source Leakage

-

-

±100

nA

Total Gate Charge

2

-

23

nC

Gate-Source Charge

-

3

nC

Gate-Drain ("Miller") Charge

-

17

nC

Turn-on Delay Time

2

-

8.8

-

ns

Rise Time

-

95

-

ns

Turn-off Delay Time

-

24

-

ns

Fall Time

-14

-

ns

Input Capacitance

-

790

-

pF

Output Capacitance

-

475

-

pF

Reverse Transfer Capacitance

f=1.0MHz

-

195

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Continuous Source Current ( Body Diode )

-

-

66

A

Pulsed Source Current ( Body Diode )

1

-

-

210

A

Forward On Voltage

2

-

-

1.26

V

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

2/6

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

AP70L02GS/P