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STP60NS04ZB Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP60NS04ZB
Description  N-CHANNEL CLAMPED 10mohm - 60A TO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP60NS04ZB Datasheet(HTML) 1 Page - STMicroelectronics

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November 2002
STP60NS04ZB
N-CHANNEL CLAMPED 10m
Ω -60A TO-220
FULLY PROTECTED MESH OVERLAY™ MOSFET
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
s
TYPICAL RDS(on) = 0.010 Ω
s
100% AVALANCHE TESTED
s
LOW CAPACITANCE AND GATE CHARGE
s
175°C MAXIMUM JUNCTION TEMPERATURE
DESCRIPTION
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay pro-
cess which is based on a novel strip layout. The in-
herent benefits of the new technology coupled with
the extra clamping capabilities make this product
particularly suitable for the harshest operation con-
ditions such as those encountered in the automotive
environment .Any other application requiring extra
ruggedness is also recommended.
APPLICATIONS
s
ABS,SOLENOID DRIVERS
s
MOTOR CONTROL
s
DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STP60NS04ZB
CLAMPED
< 0.015
Ω
60 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS =0)
CLAMPED
V
VDG
Drain-gate Voltage
CLAMPED
V
VGS
Gate- source Voltage
CLAMPED
V
ID
Drain Current (continuous) at TC = 25°C
60
A
ID
Drain Current (continuous) at TC = 100°C
42
A
IDG
Drain Gate Current (continuous)
± 50
mA
IGS
Gate Source Current (continuous)
± 50
mA
IDM ( )
Drain Current (pulsed)
240
A
PTOT
Total Dissipation at TC = 25°C
150
W
Derating Factor
1
W/°C
VESD(G-S)
Gate-Source ESD(HBM-C=100 pF, R=1.5 K
Ω)
6kV
VESD(G-D)
Gate-Drain ESD(HBM-C=100 pF, R=1.5 K
Ω)
4kV
VESD(D-S)
Drain-Source ESD(HBM-C=100 pF, R=1.5 K
Ω)
4kV
Tstg
Storage Temperature
–65to175
°C
Tj
Max. Operating Junction Temperature


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