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STP6N60FI Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP6N60FI
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP6N60FI Datasheet(HTML) 1 Page - STMicroelectronics

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STP6N60FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
s
TYPICAL RDS(on) =1
Ω
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
TYPE
VDSS
R DS(on)
ID
STP6N60FI
600 V
< 1. 2
Ω
3.8 A
1
2
3
ISOWATT220
May 1993
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
VDS
Drain-source Voltage (VGS = 0)
600
V
VDG R
Drain- gate Voltage (RGS =20 k
Ω)
600
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (cont inuous) at T c =25
oC3.8
A
ID
Drain Current (cont inuous) at T c =100
oC2.4
A
IDM(
•)
Drain Current (pulsed)
24
A
Ptot
Total Dissipation at Tc =25
oC40
W
Derating Factor
0. 32
W/
oC
VISO
I nsulat ion Withstand Voltage (DC)
2000
V
Tstg
St orage Temperat ure
-65 to 150
oC
Tj
Max. Operat ing Junction Temperature
150
oC
(
•) Pulse width limited by safe operating area
1/9


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