STP70NF03L datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STP70NF03L

Description	N-CHANNEL 30V - 0.008ohm - 70A TO-220/I2PAK LOW GATE CHARGE STripFET??POWER MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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March 2001

STP70NF03L

STB70NF03L-1

N-CHANNEL 30V - 0.008

Ω - 70A TO-220/I2PAK

LOW GATE CHARGE STripFET™ POWER MOSFET

(1) ISD ≤70A, di/dt ≤290A/µs, VDD =24 V ; Tj ≤ TJMAX.

s

TYPICAL RDS(on) = 0.008 Ω

s

TYPICAL Qg = 35 nC @ 10 V

s

OPTIMAL RDS(on) x Qg TRADE-OFF

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power Mosfet is the third

generation of STMicroelectronics unique “Single

Feature Size

™” strip-based process. The result-

ing transistor shows the best trade-off between on-

resistance and gate charge. When used as high

and low side in buck regulators, it gives the best

performance in terms of both conduction and

switching losses. This is extremely important for

motherboards where fast switching and high effi-

ciency are of paramount importance.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC

CONVERTERS

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STP70NF03L

STB70NF03L-1

30 V

< 0.01

Ω

< 0.01

Ω

70 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

30

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

30

V

VGS

Gate- source Voltage

± 15

V

ID

Drain Current (continuos) at TC = 25°C

70

A

ID

Drain Current (continuos) at TC = 100°C

50

A

IDM (q)

Drain Current (pulsed)

280

A

PTOT

Total Dissipation at TC = 25°C

100

W

Derating Factor

0.67

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

4

V/ns

Tstg

Storage Temperature

–65 to 175

°C

Tj

Max. Operating Junction Temperature

175

°C

TO-220

1

2

3

1

2

3

I2PAK

INTERNAL SCHEMATIC DIAGRAM

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