STP80N05-09 datasheet(2/9 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Rthc-sink

Thermal Resist ance Junc tion-case

Max

Thermal Resist ance Junc tion-ambi ent

Max

Thermal Resist ance Case -sink

Typ

Max imum Lead Temperature For Sol dering Pu rpose

62.5

0.5

300

oC/W

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Va lue

Unit

IAR

Avalanche Current, Repeti tive or Not-Repetit ive

(pulse width l imit ed by Tj max ,

δ <1%)

EAS

Single Pulse Avalanc he Energy

(starti ng Tj =25

oC, ID =IAR,VDD =25 V)

600

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symbol

P arameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-so urce

Breakdown Vo ltage

ID =250

µAVGS = 0

IDSS

Zero G ate Vo ltage

Drain Current (VGS =0)

VDS =Max Rating

VDS = Max Rating

Tc =125

µA

IGSS

Gate-body Leak age

Current (VDS =0)

VGS =

± 20 V

± 100

ON (

∗)

Symbol

P arameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Vo ltage VDS =VGS

ID =250

µA2

RDS(on)

Static Drai n-s ource On

Resi stance

VGS = 10V ID =40 A

0.007

0.009

Ω

ID(on)

On State Drai n Current

VDS >ID(on) xRDS(on)max

VGS =10 V

DYNAMIC

Symbol

P arameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (

∗)

Forward

Transconductance

VDS >ID(on) xRDS(on)max

ID = 40 A

Ciss

Coss

Crss

Input Capac itance

Output Capaci tance

Reverse Trans fer

Capacitance

VDS =25 V

f = 1 MHz

VGS =0

5900

900

230

STP80N05-09

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