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STP80N06-10 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP80N06-10
Description  N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
PDF  5 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP80N06-10 Datasheet(HTML) 1 Page - STMicroelectronics

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STP80N06-10
N - CHANNEL ENHANCEMENT MODE
"ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
PRELIMINARY DATA
s
TYPICAL RDS(on) = 8.5 m
Ω
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCE TESTED
s
HIGH CURRENT CAPABILITY
s
175
oC OPERATING TEMPERATURE
s
HIGH dV/dt RUGGEDNESS
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
PWM MOTOR CONTROL
s
DC-DC & DC-AC CONVERTER
s
SYNCROUNOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
60
V
VDGR
Drain- gate Voltage (RGS = 20 k
Ω)60
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25
oC80
A
ID
Drain Current (continuous) at Tc = 100
o C60
A
IDM(
•)
Drain Current (pulsed)
320
A
Ptot
Total Dissipation at Tc = 25
o C
150
W
Derating Factor
1
W/
oC
dV/dt(1)
Peak Diode Recovery voltage slope
5
V/ns
Tstg
Storage Temperature
-65 to 175
oC
Tj
Max. Operating Junction Temperature
175
oC
(
•) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STP80N06-10
60 V
< 0.010
Ω
80 A
March 1996
1
2
3
TO-220
1/5


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