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STP80NF75L Datasheet(PDF) 1 Page - STMicroelectronics

Part # STP80NF75L
Description  N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET
PDF  11 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP80NF75L Datasheet(HTML) 1 Page - STMicroelectronics

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November 2001
.
STP80NF75L
STB80NF75L STB80NF75L-1
N-CHANNEL 75V - 0.008
Ω - 80A TO-220/D2PAK/I2PAK
STripFET™ II POWER MOSFET
s
TYPICAL RDS(on) = 0.008 Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based
process.
The
resulting
transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
SOLENOID AND RELAY DRIVERS
TYPE
VDSS
RDS(on)
ID
STP80NF75L
STB80NF75L
STB80NF75L-1
75 V
75 V
75 V
<0.01
Ω
<0.01
Ω
<0.01
Ω
80 A
80 A
80 A
1
2
3
TO-220
1
3
D2PAK
TO-263
I2PAK
TO-262
1
2
3
ABSOLUTE MAXIMUM RATINGS
(
•)Current Limited by Package
(
••) Pulse width limited by safe operating area.
(1) ISD ≤80A, di/dt ≤960A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 40A, VDD= 40V
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
75
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
75
V
VGS
Gate- source Voltage
± 16
V
ID(•)
Drain Current (continuos) at TC = 25°C
80
A
ID
Drain Current (continuos) at TC = 100°C
80
A
IDM(••)
Drain Current (pulsed)
320
A
Ptot
Total Dissipation at TC = 25°C
300
W
Derating Factor
2
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
12
V/ns
EAS (2)
Single Pulse Avalanche Energy
930
mJ
Tstg
Storage Temperature
-55 to 175
°C
Tj
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM


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