STPS10L45CG datasheet(3/7 Pages) STMICROELECTRONICS

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STPS10L45CT/CG/CF/CFP

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1E-3

1E-2

1E-1

1E+0

100

IM(A)

Tc=25°C

Tc=125°C

Tc=75°C

t(s)

δ=0.5

Fig. 5-1:

Non repetitive surge peak forward

current

versus

overload

duration

(maximum

values, per diode) (TO-220AB and D

2PAK).

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

δ=tp/T

Fig. 6-1: Relative variation of thermal impedance

junction to case versus pulse duration.

(TO-220AB and D

2PAK).

1E-3

1E-2

1E-1

1E+0

IM(A)

Tc=25°C

Tc=125°C

Tc=75°C

δ=0.5

t(s)

Fig. 5-2:

Non repetitive surge peak forward

current

versus

overload

duration

(maximum

values,

per

diode)

(ISOWATT220AB,

TO-220FPAB).

1E-3

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ = 0.1

δ = 0.2

δ = 0.5

Single pulse

δ=tp/T

Fig. 6-2: Relative variation of thermal impedance

junction to case versus pulse duration.

(ISOWATT220AB, TO-220FPAB).

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Fig. 4: Normalized avalanche power derating

versus junction temperature.

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

Fig. 3: Normalized avalanche power derating

versus pulse duration.

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