PRELIMINARY DATA

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

February 2007

Rev 3

1/10

10

Features

“enhanced generation“ EHVS1

variation

directive

Description

The HD1750JL is manufactured using Diffused

Collector in Planar technology adopting new and

Enhanced High Voltage Stricture 1 (E.H.V.S.1)

developed to fit High-Definition CRT display. The

new HD product series show improved silicon

efficiency bringing updated performance to the

Horizontal Deflection stage.

Applications

Internal schematic diagram

TO-264

1

2

3

HD1750JL

Very high voltage NPN power transistor for high definition and slim

CRT display

www.st.com

Order code

Part number

Marking

Package

Packaging

HD1750JL

HD1750JL

TO-264

Tube