MRF281SR1 MRF281ZR1

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for digital and analog cellular PCN and PCS base station

applications with frequencies from 1000 to 2500 MHz. Characterized for

operation Class A and Class AB at 26 volts in commercial and industrial

applications.

• Specified Two-Tone Performance @ 1930 and 2000 MHz, 26 Volts

Output Power — 4 Watts PEP

Power Gain — 11 dB

Efficiency — 30%

Intermodulation Distortion — -29 dBc

• Capable of Handling 10:1 VSWR, @ 26 Vdc,

2000 MHz, 4 Watts CW Output Power

Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• S-Parameter Characterization at High Bias Levels

• RoHS Compliant

• Available in Tape and Reel. R1 Suffix = 500 Units per

12 mm, 7 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +65

Vdc

Gate-Source Voltage

±20

Vdc

Derate above 25°C

20

0.115

W

W/°C

Storage Temperature Range

- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

5.74

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

65

74

—

Vdc

Zero Gate Voltage Drain Current

—

—

10

μAdc

Gate-Source Leakage Current

—

—

1

μAdc

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Document Number: MRF281

Rev. 5, 5/2006

Freescale Semiconductor

Technical Data

MRF281SR1

MRF281ZR1

2000 MHz, 4 W, 26 V

LATERAL N-CHANNEL

BROADBAND

RF POWER MOSFETs

CASE 458B-03, STYLE 1

NI-200S

MRF281SR1

CASE 458C-03, STYLE 1

NI-200Z

MRF281ZR1

© Freescale Semiconductor, Inc., 2006. All rights reserved.