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ST13003D-K Datasheet(PDF) 1 Page - STMicroelectronics |
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ST13003D-K Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  November 2007 Rev 1 1/8 8 ST13003D-K High voltage fast-switching NPN power transistor Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode Applications ■ Electronic ballast for fluorescent lighting Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications. Figure 1. Internal schematic diagram 3 2 1 SOT-32 Table 1. Device summary Order code Marking Package Packaging ST13003D-K 13003D SOT-32 cardboard box www.st.com |
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