STF13NM50N datasheet(4/18 Pages) STMICROELECTRONICS

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Electrical characteristics

STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N

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Electrical characteristics

(TCASE= 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

500

dv/dt(1)

Characteristics value at turn off on inductive load

Drain-source voltage slope

VDD=400 V, ID=12 A,

VGS=10 V

V/ns

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc=125°C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 6 A

0.25

0.32

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward transconductance

VDS =15 V, ID= 6 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =50 V, f=1 MHz, VGS=0

960

Coss eq.

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0 to 480 V

110

Gate input resistance

f=1 MHz Gate DC Bias=0

test signal level=20 mV

open drain

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=400 V, ID = 12 A

VGS =10 V

(see Figure 19)

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