HIT673 datasheet(2/5 Pages) RENESAS

Part #	HIT673

Description	Silicon PNP Epitaxial

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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2 / 5 page

REJ03G1608-0100 Rev.1.00 Nov 28, 2007

Page 2 of 4

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min.

Typ

Max.

Unit

Test Conditions

Collector to base breakdown voltage

V(BR)CBO

–50

—

IC = –10

µA, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

–50

—

IC = –0.1 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

–5

—

IE = –10

µA, IC = 0

Collector cutoff current

ICBO

—

–500

VCB = –50 V, IE = 0

Emitter cutoff current

IEBO

—

–500

VEB = –5 V

DC current transfer ratio

hFE1

—

320

—

VCE = –3 V, IC = –10 mA

Collector to emitter saturation voltage

VCE(sat)

—

–0.6

IC = -150 mA, IB = –15 mA

Base to emitter voltage

VBE(on)

—

–1.2

VCE = –3V, IC = –10 mA

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