STQ1NC60R datasheet(3/9 Pages) STMICROELECTRONICS

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STQ1NC60R

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

DYNAMIC

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS =15V, ID = 0.3 A

0.87

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V,f= 1MHz,VGS =0

108

2.5

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD =300 V, ID = 0.5 A

RG = 4.7Ω VGS =10 V

(Resistive Load see, Figure 3)

7.2

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =480V, ID =1 A,

VGS =10V, RG = 4.7Ω

7.3

3.4

2.5

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD = 480V, ID =1 A,

RG =4.7Ω, VGS = 10V

(Inductive Load see, Figure 5)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

0.3

1.2

VSD (1)

Forward On Voltage

ISD = 0.3 A, VGS =0

1.6

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 1 A, di/dt = 100A/µs

VDD =25 V,Tj = 150°C

(see test circuit, Figure 5)

450

720

3.2

µC

Thermal Impedance

Safe Operating Area

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