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STQ1NE10L Datasheet(PDF) 1 Page - STMicroelectronics

Part # STQ1NE10L
Description  N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFET™ POWER MOSFET
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ1NE10L Datasheet(HTML) 1 Page - STMicroelectronics

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December 2002
.
STQ1NE10L
N-CHANNEL 100V - 0.3
Ω - 1A TO-92
STripFET™ POWER MOSFET
s
TYPICAL RDS(on) = 0.3 Ω
s
EXCEPTIONAL HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
AVALANCHE RUGGED TECHNOLOGY
s
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based
process.
The
resulting
transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL (DISK DRIVES, etc.)
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
TYPE
VDSS
RDS(on)
ID
STQ1NE10L
100 V
<0.4
Ω
1 A
TO-92
TO-92
(Ammopack)
ABSOLUTE MAXIMUM RATINGS
(
•) Pulse width limited by safe operating area.
(1) Related to Rthj -l
(2) ISD ≤1A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(3) Starting Tj = 25 oC, ID = 1A, VDD = 50V
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
100
V
VGS
Gate- source Voltage
± 16
V
ID
Drain Current (continuous) at TC = 25°C
1A
ID
Drain Current (continuous) at TC = 100°C
0.6
A
IDM(•)
Drain Current (pulsed)
4
A
Ptot(1)
Total Dissipation at TC = 25°C
3W
Derating Factor
0.025
W/°C
dv/dt (2)
Peak Diode Recovery voltage slope
6
V/ns
EAS (3)
Single Pulse Avalanche Energy
400
mJ
Tstg
Storage Temperature
-55 to 150
°C
Tj
Operating Junction Temperature
°C
INTERNAL SCHEMATIC DIAGRAM


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