STS1DNC45 datasheet(2/8 Pages) STMICROELECTRONICS

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STS1DNC45

2/8

THERMAL DATA

(#) When Mounted on FR4 board (Steady State)

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Rthj-amb(#)

Thermal Resistance Junction-ambient Max Single Operation

Thermal Resistance Junction-ambient Max Dual Operation

62.5

°C/W

Max. Operating Junction Temperature

150

°C

Tstg

Storage Temperature

–65 to 150

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

0.4

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID =IAR,VDD =50 V)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

450

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ± 30V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 250µA

2.3

3.7

RDS(on)

Static Drain-source On

Resistance

VGS =10 V,ID = 0.5 A

4.1

4.5

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS =25V, ID = 0.5 A

1.1

Ciss

Input Capacitance

VDS =25V,f= 1MHz, VGS =0

160

Coss

Output Capacitance

27.5

Crss

Reverse Transfer

Capacitance

4.7

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