STS3DPF30L

DUAL P - CHANNEL 30V - 0.145

Ω - 3A SO-8

STripFET

™ POWER MOSFET

PRELIMINARY DATA

s

Ω

s

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

s

LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the second generation of

STMicroelectronics unique "Single Feature Size

™

" strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remarka-

ble manufacturing reproducibility.

APPLICATIONS

s

BATTERY MANAGMENT IN NOMADIC

EQUIPMENT

s

POWER MANAGMENT IN CELLULAR

PHONES

s

DC-DC CONVERTER

®

INTERNAL SCHEMATIC DIAGRAM

May 2000

SO-8

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

30

V

Ω)

30

V

Gate-source Voltage

± 20

V

Drain Current (continuous) at Tc = 25

Single Operation

Single Operation

3

1.9

A

A

•)

Drain Current (pulsed)

12

A

2

1.6

W

W

(

•) Pulse width limited by safe operating area

Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

TYPE

STS3DPF30L

30 V

< 0.16

Ω

3 A

1/5