STS3DPFS30L

P - CHANNEL 30V - 0.13

Ω - 3A S0-8

PRELIMINARY DATA

DESCRIPTION:

This product associates the latest low voltage

Schottky diode. Such configuration is extremely

versatile in implementing, a large variety of DC-DC

converters for printers, portable equipment, and

cellular phones.

®

INTERNAL SCHEMATIC DIAGRAM

May 2000

MOSFET ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

30

V

Ω)30

V

Gate-source Voltage

± 20

V

A

1.9

A

•)

Drain Current (pulsed)

12

A

W

MAIN PRODUCT CHARACTERISTICS

MOSFET

30V

<0.16

Ω

3A

SCHOTTKY

3A

30V

0.51V

SO-8

SCHOTTKY ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Repetitive Peak Reverse Voltage

30

V

RMS Forward Current

20

A

Average Forward Current

δ =0.5

3A

Surge Non Repetitive Forward Current

tp= 10 ms

Sinusoidal

75

A

Non Repetitive Peak Reverse Current

tp=100

µs1

A

dv/dt

Critical Rate Of Rise Of Reverse Voltage

10000

V/

µs

(

•) Pulse width limited by safe operating area

Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

1/5