STS3DPFS45 datasheet(2/8 Pages) STMICROELECTRONICS

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STS3DPFS45

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TERMAL DATA

(*) Mounted on Fr-4 board (Steady State)

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

ON (1)

SCHOTTCKY STATIC ELECTRICAL CHARACTERISTICS

DYNAMIC

Rthj-amb

Tstg

Thermal Resistance Junction-ambient MOSFET

Thermal Resistance Junction-ambient SCHOTTKY

Storage Temperature Range

Maximum Lead Temperature For Soldering Purpose

MAX

62.5

100

-65 to 150

150

oC/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250 µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 1.5 A

0.080

0.11

Ω

ID(on)

On State Drain Current

VGS = 10 V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

IR(*)

Reversed Leakage Current

TJ= 25 oC

VR= 45 V

TJ= 125 oC

VR= 45 V

0.03

0.2

100

VF(*)

Forward Voltage drop

TJ= 25 oC

IF= 3 A

TJ= 125 oC

IF= 3 A

0.42

0.51

0.46

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (*)

Forward Transconductance

VDS>ID(on)xRDS(on)max ID=1.5A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

1190

200

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