STP30NM60N datasheet(3/18 Pages) STMICROELECTRONICS

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STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N

Electrical ratings

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Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

I²PA

TO-247 D²PAK TO-220FP

VDS

Drain-source voltage (VGS=0)

600

VGS

Gate-source voltage

± 30

Drain current (continuous) at

TC = 25 °C

25 (1)

Limited only by maximum temperature allowed

Drain current (continuous) at

TC = 100 °C

15.8

15.8(1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

100

100 (1)

PTOT

Total dissipation at TC = 25 °C

190

dv/dt (3)

ISD ≤ 25A, di/dt ≤ 400A/µs, VDD =80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS)

from all three leads to external heat

sink (t=1 s;TC=25 °C)

2500

Tstg

Storage temperature

-55 to 150

°C

Max. operating juncion temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

TO-220 I²PAK TO-247 D²PAK TO-220FP Unit

Rthj-case

Thermal resistance junction-case

max

0.66

3.1

°C/W

Rthj-pcb

Thermal resistance junction-pcb

max

°C/W

Rthj-amb

Thermal resistance junction-amb

max

62.5

°C/W

Maximum lead temperature for

soldering purposes

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAR

Avalanche current, repetitive or not-repetitive (pulse

width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)

900

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