STB230NH03L datasheet(4/13 Pages) STMICROELECTRONICS

Part #	STB230NH03L

Description	N-channel 30V - 80A - D2PAK STripFET??Power MOSFET

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 13 page

Electrical characteristics

STB230NH03L

4/13

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1mA, VGS= 0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 30V,

VDS = 30V,Tc=125°C

µA

IGSS

Gate body leakage

current (VDS = 0)

VGS = ±20V

100

VGS(th)

Gate threshold voltage VDS= VGS, ID = 250µA

11.5

2.5

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 40A

2.3

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =10V, f=1 MHz, VGS=0

4700

1600

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15V, ID = 60A

VGS =10V

(see Figure 13)

Gate input resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20mV

open drain

5.5

Ω

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