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STSJ25NF3LL Datasheet(PDF) 1 Page - STMicroelectronics

Part # STSJ25NF3LL
Description  N-CHANNEL 30V - 0.0085OHM-25A PowerSO-8TM LOW GATE CHARGE STripFET TM II POWER MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STSJ25NF3LL Datasheet(HTML) 1 Page - STMicroelectronics

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October 2003
NEW DATASHEET ACCORDING TO PCN DSG/CT/2C13 MARKING: 25NF3LL@
STSJ25NF3LL
N-CHANNEL 30V - 0.0085
Ω - 25A PowerSO-8™
LOW GATE CHARGE STripFET™ II POWER MOSFET
s
TYPICAL RDS(on) = 0.0085 Ω @ 10V
s
TYPICAL Qg = 24 nC @ 4.5 V
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
s
IMPROVED JUNCTION-CASE THERMAL
RESISTANCE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
“Single
Feature
Size™” strip-based process. This silicon, housed
in thermally improved SO-8™ package, exhibits
optimal on-resistance versus gate charge trade-
off plus lower Rthj-c.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PCS
TYPE
VDSS
RDS(on)
ID
STSJ25NF3LL
30 V
<0.0105
Ω
25 A
PowerSO-8™
INTERNAL SCHEMATIC DIAGRAM
DRAIN CONTACT ALSO ON THE BACKSIDE
ABSOLUTE MAXIMUM RATINGS
(
•) Pulse width limited by safe operating area.
(*) Value limited by wires bonding
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
30
V
VGS
Gate- source Voltage
± 16
V
ID
Drain Current (continuous) at TC = 25°C (*)
25
A
ID
Drain Current (continuous) at TC = 25°C (#)
12
A
ID
Drain Current (continuous) at TC = 100°C
16
A
IDM(•)
Drain Current (pulsed)
100
A
Ptot
Total Dissipation at TC = 25°C
Total Dissipation at TC = 25°C (#)
70
3
W
W


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