STSJ2NM60 datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

STSJ2NM60

2/8

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Rthj-c

Thermal Resistance Junction-case Max

1.78

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max (1)

°C/W

Max. Operating Junction Temperature

150

°C

Tstg

Storage Temperature

– 65 to 150

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 1 mA, VGS = 0

600

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

±5

µA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V, ID = 1 A

2.8

3.2

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (4)

Forward Transconductance

VDS > ID(on) x RDS(on)max,

ID = 2 A

1.4

Ciss

Input Capacitance

VDS = 25 V, f = 1 MHz, VGS = 0

160

Coss

Output Capacitance

Crss

Reverse Transfer

Capacitance

4pF

Gate Input Resistance

f=1 MHz Gate DC Bias = 0

Test Signal Level = 20mV

Open Drain

3.5

Ω

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