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STT818B Datasheet(PDF) 1 Page - STMicroelectronics |
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STT818B Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() STT818B HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR s VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE s DC CURRENT GAIN > 100 (hFE) s 3 A CONTINUOUS COLLECTOR CURRENT (IC) s SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL APPLICATIONS s POWER MANAGEMENT IN PORTABLE EQUIPMENTS s SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS DESCRIPTION The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ® INTERNAL SCHEMATIC DIAGRAM July 2002 SOT23-6L (TSOP6) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -30 V VCEO Collector-Emitter Voltage (IB = 0) -30 V VEBO Emitter-Base Voltage (IC = 0) -5 V IC Collector Current -3 A ICM Collector Peak Current -6 A IB Base Current -0.2 A IBM Base Peak Current -0.5 A Ptot Total Dissipation at TC = 25 oC 1.2 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC Type Marking STT818B 818B 1/5 |
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