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STTH152RL Datasheet(PDF) 1 Page - STMicroelectronics |
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STTH152RL Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() 1/5 STTH152 November 2001 - Ed:1A HIGH EFFICIENCY ULTRAFAST DIODE ® The STTH152 which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. DESCRIPTION s Very low conduction losses s Negligible switching losses s Low forward and reverse recovery times s High junction temperature FEATURES AND BENEFITS Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(AV) Average forward current TI = 115°C δ = 0.5 1.5 A IFSM Surge non repetitive forward current tp=10 ms Sinusoidal 80 A Tstg Storage temperature range -65 +175 °C Tj Maximum operating junction temperature 175 °C ABSOLUTE RATINGS (limiting values) IF(AV) 1.5 A VRRM 200 V Tj (max) 175 °C VF (max) 0.75 V trr(max) 32 ns MAIN PRODUCT CHARACTERISTICS DO-15 STTH152 Symbol Parameter Value Unit Rth (j-a) Junction to ambient* 45 °C/W * On infinite heatsink with 10mm lead length. THERMAL RESISTANCES |
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