Rev.2.00 Sep 07, 2005 page 1 of 8

HAF1002(L), HAF1002(S)

Silicon P Channel MOS FET Series

Power Switching

REJ03G1133-0200

(Previous: ADE-208-586)

Rev.2.00

Sep 07, 2005

Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down

the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

Features

• Logic level operation (–4 to –6 V Gate drive)

• High endurance capability against to the short circuit

• Built-in the over temperature shut-down circuit

• Latch type shut-down operation (Need 0 voltage recovery)

Outline

RENESAS Package code: PRSS0004AE-A

(Package name: LDPAK (L) )

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK (S)-(1) )

1. Gate

2. Drain

3. Source

4. Drain

Gate resistor

Tempe-

rature

Sensing

Circuit

Latch

Circuit

Gate

Shut-

down

Circuit

D

S

G

1

2

3

4

1

2

3

4