HAF2014

Rev.3.00 Apr 27, 2006 page 3 of 7

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

15

—

—

A

Drain current

—

—

10

mA

Drain to source breakdown voltage

60

—

—

V

16

—

—

V

Gate to source breakdown voltage

–2.5

—

—

V

—

—

100

µA

—

—

50

µA

—

—

1

µA

Gate to source leak current

—

—

–100

µA

—

0.8

—

mA

Input current (shut down)

—

0.35

—

mA

Zero gate voltage drain current

—

—

10

µA

Gate to source cutoff voltage

1.0

—

2.25

V

—

25

33

m

Ω

Note 3

Static drain to source on state resistance

—

15

20

m

Ω

Note 3

Forward transfer admittance

8

16

—

S

Note 3

Output capacitance

Coss

—

940

—

pF

f = 1 MHz

Turn-on delay time

—

10.7

—

µs

Rise time

—

66

—

µs

Turn-off delay time

—

15.5

—

µs

Fall time

—

19

—

µs

Ω

Body-drain diode forward voltage

—

1

—

V

Body-drain diode reverse recovery time

—

200

—

ns

µs

Over load shut down operation time

Note4

—

1

—

ms

Notes: 3. Pulse test

4. Including the junction temperature rise of the over loaded condition.