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HAF2015RJ Datasheet(PDF) 6 Page - Renesas Technology Corp |
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HAF2015RJ Datasheet(HTML) 6 Page - Renesas Technology Corp |
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6 / 10 page ![]() HAF2015RJ REJ03G1141-0300 Rev.3.00 Aug 27, 2007 Page 6 of 9 Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 µ 100 µ 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse PDM PW T D = PW T θch – f (t) = γ s (t) • θch – f θch – f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 µ 100 µ 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse PDM PW T D = PW T θch – f (t) = γ s (t) • θch – f θch – f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 12 10 8 4 6 2 0 0.0001 1 200 180 160 140 120 0 100 24 6 8 10 ID = 0.2 A 0.01 0.1 0.001 Gate to Source Voltage vs. Shutdown Time of Load-Short Test Shutdown Time of Load-Short Test PW (S) Shutdown Case Temperature vs. Gate to Source Voltage Gate to Source Voltage VGS (V) VDD = 16 V |
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