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STTH3L06 Datasheet(PDF) 4 Page - STMicroelectronics |
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STTH3L06 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 5 page ![]() STTH3L06 4/5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 5 10 15 20 25 30 35 40 45 50 dIF/dt(A/µs) IF=IF(av) VR=400V Tj=125°C S factor Fig. 7: Softness factor versus dIF/dt (typical values). 0.00 0.25 0.50 0.75 1.00 1.25 25 50 75 100 125 Tj(°C) IRM QRR S factor IF=IF(av) VR=400V Reference: Tj=125°C Fig. 8: Relative variations of dynamic parameters versus junction temperature. 0.0 2.5 5.0 7.5 10.0 12.5 15.0 0 20 40 60 80 100 120 140 160 180 200 dIF/dt(A/µs) IF=IF(av) Tj=125°C VFP(V) Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 dIF/dt(A/µs) IF=IF(av) VFR=1.1 x VF max. Tj=125°C tfr(ns) Fig. 10: Forward recovery time versus dIF/dt (90% confidence). 1 10 100 1 10 100 1000 VR(V) F=1MHz Vosc=30mV Tj=25°C C(pF) Fig. 11: Junction capacitance versus reverse voltage applied (typical values). 0 1 234 5 6789 10 0 10 20 30 40 50 60 70 80 S(cm²) Rth(j-a) (°C/W) L lead=10mm Fig. 12: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) |
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