STU10NA50 datasheet(1/5 Pages) STMICROELECTRONICS

Part #	STU10NA50

Description	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STU10NA50

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.5

Ω

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

REPETITIVE AVALANCHE TESTED

s

LOW INTRINSIC CAPACITANCE

s

100% AVALANCHE TESTED

s

GATE CHARGE MINIMIZED

s

REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

The Max220

TM package is a new high volume

power package exibiting the same footprint as the

industry standard TO-220, but designed to

accomodate much larger silicon chips, normally

supplied in bigger packages. The increased die

capacity makes the device ideal to reduce

component count in multiple paralleled TO-220

designs and save board space with respect to

larger packages.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES (UPS)

INTERNAL SCHEMATIC DIAGRAM

TYPE

VDSS

RDS(on)

ID

STU10NA50

500 V

< 0.6

Ω

10.2 A

October 1997

1

2

3

Max220

TM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

500

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

500

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

oC

10.2

A

ID

Drain Current (continuous) at Tc = 100

oC

6.4

A

IDM(

•)

Drain Current (pulsed)

40.8

A

Ptot

Total Dissipation at Tc = 25

oC

145

W

Derating Factor

1.16

W/

oC

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

1/5

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