Feb.1999

MITSUBISHI SEMICONDUCTOR

〈HIGH-SPEED SWITCHING THYRISTOR〉

CR3AMZ

LOW POWER, STROBE USE

NON-INSULATED TYPE, GLASS PASSIVATION TYPE

Symbol

Test conditions

Unit

mA

mA

V

V

V

mA

µF

Typ.

—

—

—

—

—

—

—

Parameter

Repetitive peak reverse current

Repetitive peak off-state current

On-state voltage

Gate trigger voltage

Gate non-trigger voltage

Gate trigger current

Min.

—

—

—

—

0.1

—

—

Max.

0.1

0.1

2.0

1.5

—

30

2.2

Limits

ELECTRICAL CHARACTERISTICS

V2. Refer to section 3 on STROBE FLASHER APPLICATION shown in the last sheet for CR3JM.

1k

0.047

µ

470

Ω

470

Ω

10k

Ω

L

CR3AMZ-8

10

Ω

0.1

µ

+

−

15k

Ω

µF

L = 25

µH

CONDUCTION TIME : arbitarity

Fig 1. TEST CIRCUIT FOR COMMUTATING CAPACITOR

10

02

8

46

9

17

35

7

5

3

2

7

5

3

2

7

5

3

2

23

7

5

3

2

7

5

3

2

7

5

3

2

= 0.1W

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE VOLTAGE (V)

GATE CHARACTERISTICS

GATE CURRENT (mA)

PERFORMANCE CURVES