STU13NB60

N-CHANNEL ENHANCEMENT MODE

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

± 30V GATE TO SOURCE VOLTAGE RATING

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process,

SGS-Thomson

has

designed

an

advanced

family

of

power

MOSFETs

with

outstanding performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

600

V

Ω)

600

V

Gat e-source Voltage

± 30

V

A

A

•)

Drain Current (pulsed)

50.4

A

W

Derating F act or

1.28

W/

Peak Diode Recovery voltage slope

4.5

V/ ns

Storage T emperat ure

-65 to 150

Max. O perating Junction Temperature

150

(

•) Pulse width limited by safe operating area

October 1997

TYPE

STU13NB60

600 V

< 0.45

Ω

12.6 A

1

2

3

Max220

1/6