CT60AM-18F datasheet(2/6 Pages) RENESAS

2 / 6 page

CT60AM-18F

Rev.2.00 Jul 07, 2006 page 2 of 5

Electrical Characteristics

(Tch = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Collector-emitter leakage current

ICES

—

VCE = 900 V, VGE = 0 V

Gate-emitter leakage current

IGES

—

0.5

µA

VGE =

±20 V, VCE = 0 V

Gate-emitter threshold voltage

VGE (th)

2.0

4.0

6.0

VCE = 10 V, IC = 6 mA

Collector-emitter saturation voltage

VCE (sat)

—

2.1

2.7

IC = 60 A, VCE = 15 V

Input capacitance

Cies

—

4400

—

Output capacitance

Coes

—

115

—

Reverse transfer capacitance

Cres

—

VCE = 25 V, VGE = 0 V,

f = 1 MHz

Turn-on delay time

td (on)

—

0.05

—

µs

Turn-on Rise time

—

0.1

—

µs

Turn-off delay time

td (off)

—

0.2

—

µs

Turn-off Fall time

—

0.3

—

µs

VCC = 300 V, IC = 60 A,

VGE = 15 V, RG = 10

Ω

Tail loss

Etail

—

0.6

1.0

mJ/pls

Tail current

Itail

—

6.0

ICP = 60 A, Tj = 125

°C,

dv/dt = 200 V/

µs

Emitter-collector voltage

VEC

—

2.2

3.0

IE = 60 A, VGE = 0 V

Diode reverse recovery time

trr

—

0.5

2.0

µs

IE = 60 A, diS/dt = –20 A/

µs

Thermal resistance (IGBT)

Rth (j-c)

—

0.69

°C/W

Junction to case

Thermal resistance (Diode)

Rth (j-c)

—

4.0

°C/W

Junction to case

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