STU8NC90Z datasheet(1/10 Pages) STMICROELECTRONICS

Part #	STU8NC90Z

Description	N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESH?줚II MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Sep 2000

STU8NC90Z

STU8NC90ZI

N-CHANNEL 900V - 1.1

Ω - 7.6A Max220/I-Max220

Zener-Protected PowerMESH™III MOSFET

s

TYPICAL RDS(on) = 1.1Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

GATE-TO-SOURCE ZENER DIODES

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsur-

passed on-resistance per unit area while integrating

back-to-back Zener diodes between gate and

source. Such arrangement gives extra ESD capabil-

ity with higher ruggedness performance as request-

ed by a large variety of single-switch applications.

APPLICATIONS

s

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

s

WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STU8NC90Z

STU9NC90ZI

900 V

< 1.38

Ω

< 1.38

Ω

7 A

Symbol

Parameter

Value

Unit

STU8NC90Z

STU8NC90ZI

VDS

Drain-source Voltage (VGS = 0)

900

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

900

V

VGS

Gate- source Voltage

±25

V

ID

Drain Current (continuos) at TC = 25°C

7

7(*)

A

ID

Drain Current (continuos) at TC = 100°C

4.4

4.4(*)

A

IDM (1)

Drain Current (pulsed)

28

28(*)

A

PTOT

Total Dissipation at TC = 25°C

160

55

W

Derating Factor

1.28

0.44

W/°C

IGS

Gate-source Current

±50

mA

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=15K

Ω)

4KV

dv/dt(q)

Peak Diode Recovery voltage slope

3

V/ns

VISO

Insulation Winthstand Voltage (DC)

--

2000

V

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1)ISD ≤ 7A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(*)Limited only by maximum temperature allowed

Max220

I-Max220

1

2

3

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