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HSM107S Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # HSM107S
Description  Silicon Schottky Barrier Diode for System Protection
PDF  6 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HSM107S Datasheet(HTML) 2 Page - Renesas Technology Corp

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HSM107S
Rev.7.00, Jan.28.2004, page 2 of 5
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
8
V
Peak forward current
IFM
0.1
A
Non-Repetitive peak forward surge current
IFSM *
1
0.5
A
Average forward current
IO *
2
50
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Notes: 1. Rectangular wave, 10 ms
2. Per one device
Electrical Characteristics *
1
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse voltage
VR
8
—
—
V
IR = 1.0 mA
Reverse current
IR
30
µA
VR = 5 V
Forward voltage
VF
0.3
V
IF = 10 mA
ESD Capability *
2
100
V
C = 200 pF, Both forward
and reverse direction 1 pulse
Notes: 1. Per one device
2. Failure Criterion ; IR ≥ 60 µA at VR = 5 V



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