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H7N0308CF Datasheet(PDF) 2 Page - Renesas Technology Corp |
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H7N0308CF Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 4 page ![]() H7N0308CF Rev.3.00 Sep 07, 2005 page 2 of 3 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 60 A Drain peak current ID (pulse) Note 1 240 A Body-drain diode reverse drain current IDR 60 A Channel dissipation Pch Note 2 30 W Channel to case thermal impedance θ ch-c 4.17 °C/W Channel to ambient thermal impedance θ ch-a 62.5 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS 30 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS (off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V Note 3 — 3.8 4.8 m Ω ID = 30 A, VGS = 10 V Note 3 Static drain to source on state resistance RDS (on) — 6.0 8.5 m Ω ID = 30 A, VGS = 4.5 V Note 3 Forward transfer admittance |yfs| 42 70 — S ID = 30 A, VDS = 10 V Note 3 Input capacitance Ciss — 3350 — pF Output capacitance Coss — 840 — pF Reverse transfer capacitance Crss — 480 — pF VDS = 10 V VGS = 0 f = 1 MHz Total gate charge Qg — 52 — nC Gate to source charge Qgs — 11 — nC Gate to drain charge Qgd — 10 — nC VDD = 10 V VGS = 10 V ID = 60 A Turn-on delay time td (on) — 30 — ns Rise time tr — 370 — ns Turn-off delay time td (off) — 80 — ns Fall time tf — 27 — ns VGS = 10 V, ID = 30 A RL = 0.33 Ω Rg = 4.7 Ω Body-drain diode forward voltage VDF — 0.90 — V IF = 60 A, VGS = 0 Body-drain diode reverse recovery time trr — 55 — ns IF = 60 A, VGS = 0 diF/dt = 50 A/ µs Note: 3. Pulse test |
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