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CT30TM-8 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # CT30TM-8
Description  MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
PDF  3 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

CT30TM-8 Datasheet(HTML) 2 Page - Renesas Technology Corp

  CT30TM-8 Datasheet HTML 1Page - Renesas Technology Corp CT30TM-8 Datasheet HTML 2Page - Renesas Technology Corp CT30TM-8 Datasheet HTML 3Page - Renesas Technology Corp  
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Feb.1999
¡VCES ............................................................................... 400V
¡ICM ................................................................................... 180A
450
—
—
—
—
—
—
—
—
10
±0.1
7.0
IC = 1mA, VGE = 0V
VCE = 400V, VGE = 0V
VGE =
±40V, VCE = 0V
VCE = 10V, IC = 1mA
V(BR)CES
ICES
IGES
VGE(th)
400
±30
±40
180
–40 ~ +150
–40 ~ +150
V
V
V
A
°C
°C
VCES
VGES
VGEM
ICM
Tj
Tstg
CT30TM-8
10.5MAX.
qwe
1.3MAX.
5.2
2.8
φ 3.2
0.8
2.54
2.54
0.5
2.6
w
q
e
q GATE
w COLLECTOR
e EMITTER
V
µA
µA
V
OUTLINE DRAWING
Dimensions in mm
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30TM-8
STROBE FLASHER USE
APPLICATION
Strobe Flasher.
VGE = 0V
VCE = 0V, See notice 4
VCE = 0V, tw = 0.5s
See figure 1
Parameter
Conditions
Symbol
Ratings
Unit
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
ELECTRICAL CHARACTERISTICS (Tj = 25
°C)
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
MAXIMUM RATINGS (Tc = 25
°C)
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
TO-220F



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