STV80NE03L-06 datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

THERMAL DATA

Rthj-case

Rthj -amb

Rthc-sink

T l

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature F or Soldering Purpose

62.5

0.5

300

oC/W

oC/ W

oC/W

AVALANCHE CHARACTERISTICS

Symbo l

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max,

δ <1%)

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =15 V)

600

ELECTRICAL CHARACTERISTICS (TJ= - 40 to 150

oC unless otherwise specified)

OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =250

µAVGS =0

ID =250

µAVGS =0

Tc =25

IDSS

Zero Gat e Voltage

Drain Current (VGS =0)

VDS =Max Rating

Tc =25

VDS =Max Rating

µA

IGSS

Gat e-body Leakage

Current (VDS =0)

VGS =

± 20 V

± 100

ON (

∗)

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

VGS(th)

Gat e Threshold Voltage VDS =VGS

ID = 250

µA

VDS =VGS

ID = 250

µATJ =25 oC

0. 6

1.7

3. 0

2. 5

RDS(on)

Static Drain-source On

Resistance

VGS =10V

ID =40 A

VGS =5V

ID =40 A

VGS =10V

ID =40 A

TJ =25

VGS =5V

ID =40 A

TJ =25

0.005

0.012

0.018

0.006

0.009

Ω

ID(o n)

On State Drain Current

VDS >ID(o n) xRDS(on )max

VGS =10 V

DYNAMIC

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

gfs (

∗)Forward

Transconductance

VDS >ID(o n) xRDS(on )max

ID =40 A

Ciss

Cos s

Crss

Input Capacitance

Out put Capacitance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS = 0

6500

1500

500

8700

2000

700

STV80NE03L-06

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