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AP9971GD Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP9971GD Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
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1 / 5 page ![]() Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low On-resistance BVDSS 60V ▼ Fast Switching Speed RDS(ON) 50mΩ ▼ PDIP-8 Package ID 5A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃ /W Data and specifications subject to change without notice 1 AP9971GD RoHS-compliant Product 200809223 Parameter Rating Drain-Source Voltage 60 Gate-Source Voltage +25 Continuous Drain Current 3, V GS @ 10V 5 Continuous Drain Current 3, V GS @ 10V 3.2 Pulsed Drain Current 1 20 Total Power Dissipation 2 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.016 Thermal Data Parameter Storage Temperature Range Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 D2 S2 G1 D1 S1 D1 D1 D2 D2 S1 G1 S2 G2 PDIP-8 |
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