HAT1095C datasheet(2/7 Pages) RENESAS

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HAT1095C

Rev.5.00 Jan 26, 2006 page 2 of 6

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to Source breakdown voltage

V(BR)DSS

–12

—

ID = –10 mA, VGS = 0

Gate to Source breakdown voltage

V(BR)GSS

±8

—

IG =

±100 µA, VDS = 0

Gate to Source leakage current

IGSS

—

±10

µA

VGS =

±6.4V, VDS = 0

Drain to Source leakage current

IDSS

—

–1

µA

VDS = –12 V, VDS = 0

Gate to Source cutoff voltage

VGS(th)

–0.3

—

–1.2

ID = –1 mA, VDS = –10 V

Note3

—

108

140

Ω

ID = –1 A, VGS = –4.5 V

Note3

—

146

205

Ω

ID = –1 A, VGS = –2.5 V

Note3

Drain to Source on state resistance

RDS(on)

—

225

337

Ω

ID = –1 A, VGS = –1.8 V

Note3

Forward transfer admittance

|yfs|

—

ID = –1 A, VDS = –10 V

Note3

Input capacitance

Ciss

—

290

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

VDS = –10 V, VGS = 0,

f = 1 MHz

Total gate charge

—

3.8

—

Gate to Source charge

Qgs

—

0.7

—

Gate to Drain charge

Qgd

—

VDD = –10 V, VGS = –4.5 V,

ID = –2 A

Turn - on delay time

td(on)

—

Rise time

—

Turn - off delay time

td(off)

—

Fall time

—

VDS = –10 V, VGS = –4.5 V,

ID = –1 A, RL = 10

Ω,

Rg = 4.7

Ω

Body - Drain diode forward voltage

VDF

—

–0.8

–1.1

IF = –2 A, VGS = 0

Notes: 3. Pulse test

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