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HAT1044M Datasheet(PDF) 2 Page - Renesas Technology Corp |
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HAT1044M Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 4 page ![]() HAT1044M Rev.6.00 Sep 07, 2005 page 2 of 3 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ±20 V Drain current ID Note 2 –4.5 A Drain peak current ID (pulse) Note 1 –18 A Body-drain diode reverse drain current IDR Note 2 –4.5 A Channel dissipation Pch (pulse) Note 2 2.0 W Channel dissipation Pch (continuous) Note 3 1.05 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the alumina ceramic board (50 × 50 × 0.7 mm), PW ≤ 5 s, Ta = 25°C 3. When using the alumina ceramic board (50 × 50 × 0.7 mm), Ta = 25°C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS –30 — — V ID = –10 mA, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±20 V, VDS = 0 Zero gate voltage drain current IDSS — — –1 µA VDS = –30 V, VGS = 0 Gate to source cutoff voltage VGS (off) –1.0 — –2.5 V VDS = –10 V, ID = –1 mA RDS (on) — 50 60 m Ω ID = –3 A, VGS = –10 V Note 4 Static drain to source on state resistance RDS (on) — 80 105 m Ω ID = –3 A, VGS = –4.5 V Note 4 Forward transfer admittance |yfs| 3 5.5 — S ID = –3 A, VDS = –10 V Note 4 Input capacitance Ciss — 600 — pF Output capacitance Coss — 220 — pF Reverse transfer capacitance Crss — 150 — pF VDS = –10 V VGS = 0 f = 1 MHz Total gate charge Qg — 13 — nC Gate to source charge Qgs — 2 — nC Gate to drain charge Qgd — 3 — nC VDS = 10 V VGS = 0 f = 1 MHz Turn-on delay time td (on) — 12 — ns Rise time tr — 85 — ns Turn-off delay time td (off) — 55 — ns Fall time tf — 55 — ns VGS = –10 V, ID = –3 A, RL = 3.3 Ω Body-drain diode forward voltage VDF — –0.95 — V IF = –4.5 A, VGS = 0 Note 4 Body-drain diode reverse recovery time trr — 50 — ns IF = –4.5 A, VGS = 0 diF/dt = –20 A/ µs Note: 4. Pulse test |
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