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HAT1044M Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # HAT1044M
Description  Silicon P Channel Power MOS FET Power Switching
PDF  4 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT1044M Datasheet(HTML) 2 Page - Renesas Technology Corp

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HAT1044M
Rev.6.00 Sep 07, 2005 page 2 of 3
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
Note 2
–4.5
A
Drain peak current
ID (pulse)
Note 1
–18
A
Body-drain diode reverse drain current
IDR
Note 2
–4.5
A
Channel dissipation
Pch (pulse)
Note 2
2.0
W
Channel dissipation
Pch (continuous)
Note 3
1.05
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. When using the alumina ceramic board (50
× 50 × 0.7 mm), PW ≤ 5 s, Ta = 25°C
3. When using the alumina ceramic board (50
× 50 × 0.7 mm), Ta = 25°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–30
—
—
V
ID = –10 mA, VGS = 0
Gate to source leak current
IGSS
—
—
±0.1
µA
VGS =
±20 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
–1
µA
VDS = –30 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
—
–2.5
V
VDS = –10 V, ID = –1 mA
RDS (on)
—
50
60
m
Ω
ID = –3 A, VGS = –10 V
Note 4
Static drain to source on state resistance
RDS (on)
—
80
105
m
Ω
ID = –3 A, VGS = –4.5 V
Note 4
Forward transfer admittance
|yfs|
3
5.5
—
S
ID = –3 A, VDS = –10 V
Note 4
Input capacitance
Ciss
—
600
—
pF
Output capacitance
Coss
—
220
—
pF
Reverse transfer capacitance
Crss
—
150
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Total gate charge
Qg
—
13
—
nC
Gate to source charge
Qgs
—
2
—
nC
Gate to drain charge
Qgd
—
3
—
nC
VDS = 10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
12
—
ns
Rise time
tr
—
85
—
ns
Turn-off delay time
td (off)
—
55
—
ns
Fall time
tf
—
55
—
ns
VGS = –10 V, ID = –3 A,
RL = 3.3
Ω
Body-drain diode forward voltage
VDF
—
–0.95
—
V
IF = –4.5 A, VGS = 0
Note 4
Body-drain diode reverse recovery time
trr
—
50
—
ns
IF = –4.5 A, VGS = 0
diF/dt = –20 A/
µs
Note:
4. Pulse test



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