HAT1036R datasheet(2/7 Pages) RENESAS

2 / 7 page

HAT1036R

Rev.7.00 Sep 07, 2005 page 2 of 6

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Drain to source voltage

VDSS

–30

Gate to source voltage

VGSS

±20

Drain current

–12

Drain peak current

ID (pulse)

Note 1

–96

Body-drain diode reverse drain current

IDR

–12

Channel dissipation

Pch

Note 2

2.5

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. When using the glass epoxy board (FR4 40

× 40 × 1.6 mm), PW ≤ 10 s

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V (BR) DSS

–30

—

ID = –10 mA, VGS = 0

Gate to source leak current

IGSS

—

±0.1

µA

VGS =

±20 V, VDS = 0

Zero gate voltage drain current

IDSS

—

–1

µA

VDS = –30 V, VGS = 0

Gate to source cutoff voltage

VGS (off)

–1.0

—

–2.5

VDS = –10 V, ID = –1 mA

RDS (on)

—

Ω

ID = –6 A, VGS = –10 V

Note 3

Static drain to source on state resistance

RDS (on)

—

Ω

ID = –6 A, VGS = –4 V

Note 3

Forward transfer admittance

|yfs|

—

ID = –6 A, VDS = –10 V

Note 3

Input capacitance

Ciss

—

4200

—

Output capacitance

Coss

—

870

—

Reverse transfer capacitance

Crss

—

360

—

VDS = –10 V

VGS = 0

f = 1 MHz

Total gate charge

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

VDD = –10 V

VGS = –10 V

ID = –12 A

Turn-on delay time

td (on)

—

120

—

Rise time

—

350

—

Turn-off delay time

td (off)

—

100

—

Fall time

—

120

—

VGS = –4 V, ID = –6 A,

VDD

≅ –10 V

Body-drain diode forward voltage

VDF

—

–0.85

–1.11

IF = –12 A, VGS = 0

Note 3

Body-drain diode reverse recovery time

trr

—

IF = –12 A, VGS = 0

diF/dt = 20 A/

µs

Note:

3. Pulse test

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