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STW80NF55-06 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STW80NF55-06
Description  N-CHANNEL 55V - 0.005ohm - 80A TO-247 STripFET™ II POWER MOSFET
PDF  6 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW80NF55-06 Datasheet(HTML) 1 Page - STMicroelectronics

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PRELIMINARY DATA
October 2001
STW80NF55-06
N-CHANNEL 55V - 0.005
Ω - 80A TO-247
STripFET™ II POWER MOSFET
(1) Starting Tj = 25°C, ID = 40A, VDD = 40V
(*) Current Limited by wire bonding
s
TYPICAL RDS(on) = 0.005Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore
a remarkable
manufacturing reproducibility.
APPLICATIONS
s
DC-AC & DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
ABSOLUTE MAXIMUM RATINGS
(q) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STW80NF55-06
55 V
< 0.0065
Ω
80 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
55
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
55
V
VGS
Gate- source Voltage
±20
V
ID (*)
Drain Current (continuos) at TC = 25°C
80
A
ID
Drain Current (continuos) at TC = 100°C
80
A
IDM (q)
Drain Current (pulsed)
320
A
PTOT
Total Dissipation at TC = 25°C
300
W
Derating Factor
2
W/°C
EAS (1)
Single Pulse Avalanche Energy
1
J
Tstg
Storage Temperature
– 55 to 175
°C
Tj
Max. Operating Junction Temperature
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM


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