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DG417 Datasheet(PDF) 3 Page - Vishay Siliconix |
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DG417 Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 11 page  Document Number: 70051 S-71241–Rev. F, 25-Jun-07 www.vishay.com 3 Vishay Siliconix DG417/418/419 SCHEMATIC DIAGRAM (TYPICAL CHANNEL) Figure 1. SPECIFICATIONSa Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 V f Tempb Typc A Suffix - 55 to 125 °C D Suffix - 40 to 85 °C Unit Mind Maxd Mind Maxd Analog Switch Analog Signal Rangee VANALOG Full - 15 15 - 15 15 V Drain-Source On-Resistance rDS(on) IS = - 10 mA, VD = ± 12.5 V V+ = 13.5 V, V- = - 13.5 V Room Full 20 35 45 35 45 Ω Switch Off Leakage Current IS(off) V+ = 16.5, V- = - 16.5 V VD = ± 15.5 V VS = ± 15.5 V Room Full - 0.1 - 0.25 - 20 0.25 20 - 0.25 - 5 0.25 5 nA ID(off) DG417 DG418 Room Full - 0.1 - 0.25 - 20 0.25 20 - 0.25 - 5 0.25 5 DG419 Room Full - 0.1 - 0.75 - 60 0.75 60 - 0.75 - 12 0.75 12 Channel Off Leakage Current ID(on) V+ = 16.5 V, V- = - 16.5 V VS = VD = ± 15.5 V DG417 DG418 Room Full - 0.4 - 0.4 - 40 0.4 40 - 0.4 - 10 0.4 10 DG419 Room Full - 0.4 - 0.75 - 60 0.75 60 - 0.75 - 12 0.75 12 Digital Control Input Current VIN Low IIL Full 0.005 - 0.5 0.5 - 0.5 0.5 µA Input Current VIN High IIH Full 0.005 - 0.5 0.5 - 0.5 0.5 Dynamic Characteristics Turn-On Time tON RL = 300 Ω, CL = 35 pF VS = ± 10 V See Switching Time Test Circuit DG417 DG418 Room Full 100 175 250 175 250 ns Turn-Off Time tOFF DG417 DG418 Room Full 60 145 210 145 210 Transition Time tTRANS RL = 300 Ω, CL = 35 pF VS1 = ± 10 V, VS2 = ± 10 V DG419 Room Full 175 250 175 250 Break-Before-Make Time Delay (DG403) tD RL = 300 Ω, CL = 35 pF VS1 = VS2 = ± 10 V DG419 Room 13 5 5 Charge Injection Q CL = 10 nF, Vgen = 0 V, Rgen = 0 Ω Room 60 pC Source Off Capacitance CS(off) f = 1 MHz, VS = 0 V Room 8 pF Drain Off Capacitance CD(off) DG417 DG418 Room 8 Channel On Capacitance CD(on) f = 1 MHz, VS = 0 V DG417 DG418 Room 30 DG419 Room 35 Level Shift/ Drive VIN VL S V+ GND V- D V- V+ |
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