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STY140NS10 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STY140NS10
Description  N-CHANNEL 100V - 0.009 ohm - 140A MAX247??MESH OVERLAY??POWER MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STY140NS10 Datasheet(HTML) 3 Page - STMicroelectronics

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STY140NS10
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V
ID = 70 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 1)
40
150
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=50V ID=140A VGS=10V
(see test circuit, Figure 2)
450
70
170
600
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 50 V
ID = 70 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 1)
465
270
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
140
560
A
A
VSD (*)
Forward On Voltage
ISD = 140 A
VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 140 A
di/dt = 100A/µs
Vr = 20 V
Tj = 150°C
(Inductive Load, Figure 3)
275
2
15
ns
µC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance



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