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STY16NA90 Datasheet(PDF) 1 Page - STMicroelectronics |
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STY16NA90 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 5 page  STY16NA90 N - CHANNEL 900V - 0.5 Ω - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.5 Ω s EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP s ± 30V GATE TO SOURCE VOLTAGE RATING s REPETITIVE AVALANCHE TESTED s LOW INTRINSIC CAPACITANCE s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION The Max247 TM package is a new high volume power package exibiting the same footprint as t he industry standard TO -247, but designed t o accomodat e much larger silicon chips, normally supplied in bigger packages such as TO -264. The increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space with respect to larger packages. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ® INTERNAL SCHEMATIC DIAGRAM TYPE VDSS RDS(on) ID STY16NA90 900 V < 0.54 Ω 16 A June 1998 Max247 TM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Uni t VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain- gate Voltage (RGS =20 k Ω) 900 V VGS Gate-source Voltage ± 30 V ID Drain Current (cont inuous) at Tc =25 oC16 A ID Drain Current (cont inuous) at Tc =100 oC10 A IDM( •) Drain Current (pulsed) 64 A Ptot Tot al Dissipation at Tc =25 oC 300 W Derating Fact or 2.4 W/ oC Tstg St orage Temperature -55 to 150 oC Tj Max. Operat ing Junction Temperat ure 150 oC ( •) Pulse width limited by safe operating area 1/5 |
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Similar Description - STY16NA90 |
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